Fraunhofer Develops DUV-Assisted Athermal Laser Grooving for Low-κ Dielectrics in Advanced Packaging

July 5, 2026

Karriere Fraunhofer-Gesellschaft Germany

Overview

Fraunhofer ILT is exploring a novel dual-pulse approach, DUV-assisted athermal laser grooving, for low-κ dielectrics in advanced microelectronics packaging. This technology temporarily generates free carriers within low-κ materials using a DUV pulse, enabling subsequent laser pulses to remove layers without damaging the substrate. This enhances precision and reliability for the microfabrication crucial for next-generation high-performance semiconductor packaging.

In Depth

Key Findings

Fraunhofer ILT is advancing research into an innovative “DUV-assisted athermal laser grooving” technology for the microfabrication of low-κ dielectric materials, which are essential for advanced microelectronics packaging. This novel dual-pulse approach allows for high-precision material removal while minimizing thermal damage to the substrate.

Technical Details

Dual-Pulse Approach: The technology begins with a Deep Ultraviolet (DUV) laser pulse that delivers energy exceeding the bandgap of the low-κ material, temporarily generating free carriers (electrons and holes) within it. This alters the material’s electrical properties, making it absorptive to a subsequent laser pulse, whereas it would normally be transparent.
Athermal Processing: A second laser pulse, precisely timed after the free carrier generation, selectively removes the modified layer without inducing thermal damage to the underlying substrate. Traditional laser processing often struggles with heat-affected zone damage; this athermal approach ensures high-precision grooving while maintaining the structural integrity of delicate low-κ materials.
Importance of Low-κ Materials: Low-κ dielectrics are crucial for reducing signal delay and power loss within microelectronic chips. In advanced packaging, particularly 3D ICs and chiplet integration, the ability to precisely microfabricate these materials without damage directly impacts overall performance and reliability.

Background & Industry Context

The evolution of AI and High-Performance Computing (HPC) has dramatically increased semiconductor chip integration density and operating frequencies. Consequently, interconnect capacitance within chips has become a significant source of signal delay and crosstalk, limiting overall chip performance. Low-κ dielectrics were introduced to mitigate this issue, but their inherent mechanical weakness and thermal fragility have made them extremely challenging to process. Therefore, the development of non-destructive and high-precision fabrication techniques is an urgent industry imperative.

Strategic Significance & Outlook

This DUV-assisted athermal laser grooving technology has the potential to solve long-standing challenges in low-κ material processing, contributing to the realization of next-generation ultra-dense, high-performance semiconductor packaging. By paving the way for smaller, faster, and more power-efficient AI chips and HPC systems, it will drive innovation across a wide range of electronic device sectors. Future research will focus on improving processing speed, scalability, and applicability to various low-κ materials, solidifying its role as a key enabling technology for future microelectronics.

Source: https://jobs.fraunhofer.de/job/Aachen-Thesis-DUV-Assisted-Athermal-Laser-Grooving-of-Low-%CE%BA-Dielectrics-for-Advanced-Packaging-52074/1409293533/

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