Indium Corporation Unleashes Low-Temperature Silver Sintering Paste to Propel GaN Power Device Evolution

August 23, 2026

Indium Corporation USA

Overview

Indium Corporation has launched a novel low-temperature silver sintering paste specifically designed for Gallium Nitride (GaN) power devices. This advanced material enables high-reliability die attachment at significantly reduced processing temperatures, safeguarding thermally sensitive GaN structures and accelerating the widespread integration of GaN technology in critical power electronics applications. It offers superior thermal performance and mechanical robustness vital for next-generation designs.

In Depth

Background: The Promise and Challenge of GaN Power

Gallium Nitride (GaN) power devices are poised to revolutionize next-generation power electronics, distinguished by their exceptional characteristics including high switching speeds, remarkably low on-resistance, and superior efficiency. These attributes make GaN ideal for demanding applications across various sectors, from consumer electronics to electric vehicles and data centers. However, the inherent thermal sensitivity of GaN materials has historically posed significant manufacturing challenges, particularly concerning the high-temperature processes typically required for robust die attachment. Addressing this thermal constraint is paramount for ensuring device reliability, reducing production costs, and ultimately accelerating GaN’s market penetration and competitiveness.

The Innovation: Enabling Low-Temperature Die Attach for GaN

Indium Corporation’s latest breakthrough is a new low-temperature silver sintering paste, specifically engineered to overcome the thermal sensitivities of Gallium Nitride (GaN) power devices. This groundbreaking material facilitates highly reliable die attachment at significantly reduced processing temperatures. By mitigating thermal stress, this innovation directly enhances the performance, long-term reliability, and overall durability of GaN devices, paving the way for their broader adoption in critical manufacturing processes.

Technical Advantages

Revolutionizing Low-Temperature Sintering: Traditional silver sintering often necessitates high-temperature processing, a major detriment to heat-sensitive GaN devices. Indium Corporation’s novel paste, through its proprietary composition, enables robust die attachment with minimal thermal stress on GaN components. This is achieved by facilitating sintering at processing temperatures dozens of degrees Celsius lower than conventional methods, critically preventing GaN material degradation during assembly.
Uncompromised High-Reliability Die Attach: Despite the significantly lower processing temperatures, this advanced material delivers exceptional bonding strength and unwavering reliability. It forms stable, resilient connections that withstand severe thermal cycling and mechanical stresses inherent in GaN device operation, thereby significantly extending the operational lifespan of the devices.
Optimized Thermal Performance: Leveraging silver’s inherently high thermal conductivity and creating a dense, void-free sintered structure, the paste ensures highly efficient heat dissipation from the GaN chip to the heatsink. This superior thermal management capability is crucial for maintaining low junction temperatures, unlocking the maximum performance potential of GaN power devices, and supporting highly efficient power conversion.
Accelerating GaN Technology Adoption: The ability to process GaN devices at lower temperatures dramatically simplifies their manufacturing integration. This streamlines their incorporation into existing production lines originally configured for silicon-based devices, thereby lowering manufacturing barriers. This critical advancement is expected to accelerate the widespread adoption of GaN technology across a diverse range of power electronics applications, from compact smartphone and EV chargers to robust server power supplies.

Strategic Impact & Future Outlook

Indium Corporation projects that this innovative low-temperature silver sintering paste will significantly accelerate the expansion of the GaN power device market. Beyond GaN, the company is actively exploring its application to other wide-bandgap (WBG) semiconductor devices, including Silicon Carbide (SiC), further extending its impact on high-performance power solutions. As a recognized leader in material solutions for the power electronics sector, Indium Corporation reaffirms its commitment to pioneering technological innovation, contributing directly to the development of a more energy-efficient and sustainable global society.

Source: https://www.indium.com/news/2026/sinter-paste-gan

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