SK Hynix and Samsung Unveil Production-Ready HBM4 with Hybrid Bonding, Targeting H2 2026 Mass Production

Techfund South Korea

Overview

At CES 2026, SK Hynix showcased a 16-layer, 48GB HBM4 device leveraging advanced Through-Silicon Via (TSV) and hybrid bonding for high density, while Samsung presented a 12-layer, 36GB HBM4 stack focused on thermal management. Both memory giants are targeting mass production in the second half of 2026. This signals a pivotal industry shift towards hybrid bonding, especially as HBM stacks exceed 16 layers, promising enhanced performance and reliability for next-generation AI and HPC applications.

In Depth

Current State of HBM4 Development and Hybrid Bonding Integration

High Bandwidth Memory (HBM) is an indispensable technology for maximizing chip performance in artificial intelligence (AI) and high-performance computing (HPC) applications. At CES 2026, leading memory manufacturers SK Hynix and Samsung unveiled near-production prototypes of their next-generation HBM4 devices, with a stated goal of commencing mass production in the second half of 2026. This announcement underscores the industry’s accelerated transition to HBM4, a generation that necessitates the integration of novel bonding technologies to achieve higher stacking densities and data transfer rates compared to preceding HBM versions.

Technical Demonstrations by SK Hynix and Samsung

• SK Hynix: The company exhibited a 16-layer HBM4 device boasting a 48 GB capacity, achieved through the sophisticated application of Through-Silicon Via (TSV) technology and hybrid bonding. This demonstration highlighted significant advancements in stacking density and performance characteristics, crucial for addressing the demands of complex AI workloads.
• Samsung: Samsung presented a 12-layer HBM4 stack with a 36 GB capacity, emphasizing enhancements in thermal management and manufacturing yield. As HBM stacking increases, heat dissipation becomes a critical challenge, making Samsung’s approach focused on practicality and reliability. The company aims to balance high performance with stability through proprietary thermal dissipation technologies and optimized manufacturing processes.

Industry Trends and Future Outlook

The evolution of HBM technology is precipitating a significant paradigm shift in bonding techniques across the industry. Particularly as HBM stacks push beyond 16 layers, conventional micro-bump bonding methods face increasing difficulties in achieving finer interconnect pitches while maintaining reliability. Consequently, memory manufacturers are actively exploring the phased introduction of hybrid bonding technology for HBM4 and subsequent generations. Hybrid bonding offers the promise of significantly finer pitches and superior connection reliability, expected to contribute to enhanced performance and manufacturing efficiency for next-generation HBM. This technological innovation is poised to be a key enabler for pushing the performance boundaries of future AI and HPC systems.