Toshiba: 3300V SiC MOSFET specs and 40% thermal resistance cut

Magazine Industry USA Japan

Overview

Toshiba Device & Storage Corporation has unveiled a new 3300V SiC MOSFET module incorporating silver sintering die-attach technology. This module achieves up to a 40% reduction in thermal resistance compared to conventional solder bonding, drastically improving long-term reliability under severe thermal stress. This innovation enables higher switching frequencies, reduced size of magnetic filters and heat sinks, and maximizes the performance of SiC power devices in industrial and renewable energy applications.

In Depth

Key Findings

Toshiba Device & Storage Corporation has launched a new 3300V SiC MOSFET module, significantly enhancing the performance and reliability of SiC power devices. The module integrates innovative silver sintering die-attach technology, successfully reducing thermal resistance by up to 40% compared to traditional solder bonding. This improvement dramatically boosts the long-term reliability under severe thermal stress, thereby increasing the overall robustness and lifespan of power electronic systems.

Technical / Clinical Details

Historically, SiC power modules have utilized solder bonding for connecting chips to substrates. However, under high power density and elevated operating temperatures, solder degradation presented a significant challenge. Toshiba’s new module employs silver sintering technology, which uses high-melting-point, highly thermally conductive silver particles for bonding. This technique minimizes voids within the bonding layer, enabling highly efficient heat dissipation from the chip and substantially improving the overall thermal resistance of the module. Specifically, the internal thermal resistance is reduced by over 40% compared to conventional solder-bonded products, suppressing junction temperature rise and enhancing resistance to thermal fatigue, a common failure mode. This allows for higher switching frequencies in inverter and converter designs, contributing to the miniaturization of magnetic filters and heat sinks.

Background & Context

The demand for energy efficiency and higher performance is rapidly increasing in sectors such as electric vehicles (EVs), industrial equipment, and renewable energy systems. SiC (silicon carbide) power devices are considered next-generation power semiconductors due to their low loss and high-speed switching capabilities, making them ideal for these applications. However, the high performance of SiC devices also leads to significant heat generation, making efficient cooling and ensuring reliability critical technical challenges. Toshiba’s silver sintering die-attach technology offers a decisive solution to this challenge, unlocking the full potential of SiC power devices.

Strategic Significance & Outlook

This 3300V SiC MOSFET module is expected to be adopted in a wide range of high-voltage, high-current applications, including railway systems, industrial motor drives, and power grid stabilization equipment. The reduction in thermal resistance and enhancement in reliability will directly contribute to system miniaturization, weight reduction, and extended lifespan, ultimately leading to improved overall energy efficiency. Toshiba plans to further develop this technology and expand its SiC power module lineup across various voltage and current ratings, aiming to contribute to the realization of a next-generation energy-saving society.

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