EPC Space– tag –
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EPC Space Unveils Radiation-Hardened eGaN FETs with Ultra-Low On-Resistance for Next-Gen Space Computing
Aerospace & Defence USA Overview EPC Space has announced new 15V, 25V, and 40V radiation-hardened eGaN FETs in plastic surface-mount packages, targeting next-generation space computing systems incorporating AI and high-performance proces... -
EPC Space Unveils Rad-Hard Linear Regulators Utilizing eGaN HEMTs, Enhancing Spaceflight System Lightweighting and Reliability
EPC Space USA Overview EPC Space has introduced a technology to mitigate ionizing radiation degradation in linear regulators by employing eGaN HEMTs (High Electron Mobility Transistors). Because eGaN HEMTs inherently lack the radiation-v... -
EPC Space Unveils Three Rad-Hard GaN Transistors for Spacecraft Processors, Delivering 101A Continuous Current
IN Electronics & Design UK Overview EPC Space has launched three new low-voltage, radiation-hardened Gallium Nitride (GaN) transistors specifically designed for high-current power conversion around processors and accelerators in spacecra... -
EPC Space Launches Rad-Hard 1Mrad+ eGaN FETs (15V/25V/40V) for Next-Gen Space Computing, Boosting AI/HPC Power Density and Efficiency
Power Electronics News USA Overview EPC Space has introduced three new radiation-hardened eGaN (gallium nitride) power transistors—EPC7050PCSH, EPC7066PCSH, and EPC7065PCSH—designed for high-performance power conversion in next-generatio... -
EPC Space Launches 15V, 25V, and 40V Rad-Hard eGaN FETs with >1 Mrad TID for Next-Gen Space Computing
Semiconductor Today USA Overview EPC Space LLC has announced the release of three new radiation-hardened eGaN power transistors (15V, 25V, 40V) designed for next-generation space computing systems. These devices offer ultra-low on-resist...
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