EPC Space Unveils Three Rad-Hard GaN Transistors for Spacecraft Processors, Delivering 101A Continuous Current

August 30, 2026

IN Electronics & Design UK

Overview

EPC Space has launched three new low-voltage, radiation-hardened Gallium Nitride (GaN) transistors specifically designed for high-current power conversion around processors and accelerators in spacecraft. These GaN devices are rated for 15V, 25V, and 40V, capable of handling 101A of continuous current, and feature over 1 Mrad total ionizing dose (TID) tolerance with high neutron immunity. This represents a significant technological leap in enhancing the reliability and efficiency of electronic systems in extreme space environments.

In Depth

Key Findings

EPC Space has introduced three new low-voltage, radiation-hardened Gallium Nitride (GaN) transistors, engineered specifically for high-current power conversion applications surrounding high-performance processors and accelerators in spacecraft. These innovative GaN devices boast continuous current capabilities of up to 101A at 15V, 25V, and 40V ratings, while simultaneously offering robust total ionizing dose (TID) tolerance exceeding 1 Mrad (100 kGy) and high neutron immunity. This launch signifies a critical advancement set to dramatically improve the reliability and efficiency of electronic systems operating in the unforgiving space environment.

Technical Details and Performance

The newly unveiled GaN transistors offer superior switching speeds, lower on-resistance, and higher power density compared to conventional silicon-based semiconductors. These characteristics translate into enhanced efficiency for power conversion systems and reduced heat generation, thereby alleviating the thermal management burden on spacecraft. A paramount feature is their radiation hardness. Space is an environment saturated with intense radiation from solar flares, galactic cosmic rays, and the Van Allen belts. This radiation can cause total ionizing dose (TID) damage and single-event effects (SEE) in electronic components, leading to malfunction or failure. EPC Space’s GaN devices, with their >1 Mrad TID tolerance and high neutron immunity, are designed to operate with exceptional reliability for extended periods in deep space missions and high-orbit satellites. This level of radiation hardness contributes to the miniaturization and weight reduction of electronic components that traditionally required heavy shielding, consequently improving spacecraft payload capacity and fuel efficiency. The products are designated as EPC7006 (15V), EPC7008 (25V), and EPC7019 (40V).

Background and Industry Context

The space industry is witnessing an accelerating demand for more complex and higher-performance electronic systems to support advanced AI processing, high-speed communications, and deep space exploration. These systems require not only significant computational power but also robust resilience against the harsh space environment. Gallium Nitride (GaN) technology has emerged as a promising next-generation semiconductor material, capable of surpassing the physical limits of silicon technology. Specifically, space-grade GaN devices promise to deliver smaller, lighter, and more efficient power delivery solutions, potentially revolutionizing spacecraft design. The development of radiation-hardened GaN devices exemplifies two major trends in the space industry: the pursuit of higher computational speed and enhanced environmental robustness for space electronics.

Strategic Significance and Outlook

EPC Space’s radiation-hardened GaN transistors are expected to become core components in the power systems of next-generation spacecraft and satellites. This will lead to improvements in overall performance, reliability, and lifespan of space vehicles, enabling more ambitious space missions. For example, their adoption is anticipated in power-intensive and high-reliability applications such as orbital data centers and Mars exploration rovers. Further advancements and cost reductions in GaN technology are predicted to redefine the standards for electronics across the space industry, playing a decisive role in expanding humanity’s reach and capabilities in space. This technology is a crucial enabler for accelerating the advent of the AI computing era in space.

Source: https://www.inelectronics.co.uk/epc-space-targets-processor-rails-with-rad-hard-gan/

Get our weekly technology intelligence — free

Receive an infographic that lets you judge at a glance whether each field’s analysis report is worth reading.

Subscribe Free — Weekly Tech Intelligence

By subscribing, you’ll receive Troy-Technical’s weekly technology intelligence newsletter.