Semiconductor Chip– tag –
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EPC Space Unveils Rad-Hard Linear Regulators Utilizing eGaN HEMTs, Enhancing Spaceflight System Lightweighting and Reliability
EPC Space USA Overview EPC Space has introduced a technology to mitigate ionizing radiation degradation in linear regulators by employing eGaN HEMTs (High Electron Mobility Transistors). Because eGaN HEMTs inherently lack the radiation-v... -
EPC Space Unveils Three Rad-Hard GaN Transistors for Spacecraft Processors, Delivering 101A Continuous Current
IN Electronics & Design UK Overview EPC Space has launched three new low-voltage, radiation-hardened Gallium Nitride (GaN) transistors specifically designed for high-current power conversion around processors and accelerators in spacecra... -
Infineon Launches RIC70115: A 100 krad(Si) Rad-Hard GaN Gate Driver for High-Efficiency Satellite Power Systems
New Products Germany Overview Infineon has released the RIC70115, a radiation-hardened GaN gate driver compatible with both GaN HEMTs and logic-level silicon FETs, designed for satellite power systems. This new product maximizes the bene... -
NASA JPL Initiates Testing of “HPSC,” an AI-Ready Space Processor 500x Faster Than Current Chips
Times of India USA Overview NASA's Jet Propulsion Laboratory (JPL) has begun testing its High Performance Spaceflight Computing (HPSC) processor, reportedly 500 times faster than current radiation-hardened space chips. This palm-sized, A... -
NASA’s HPSC Processor Achieves 500x Faster Performance in JPL Tests, Paving the Way for Autonomous Space AI and Deep-Space Missions
Space Daily USA Overview NASA's High-Performance Spaceflight Computing (HPSC) processor demonstrated a remarkable 500-fold increase in processing speed compared to current radiation-hardened spaceflight chips during tests at the Jet Prop... -
EPC Space Launches Rad-Hard 1Mrad+ eGaN FETs (15V/25V/40V) for Next-Gen Space Computing, Boosting AI/HPC Power Density and Efficiency
Power Electronics News USA Overview EPC Space has introduced three new radiation-hardened eGaN (gallium nitride) power transistors—EPC7050PCSH, EPC7066PCSH, and EPC7065PCSH—designed for high-performance power conversion in next-generatio... -
Microchip Technology Unveils Radiation-Hardened Space CSAC-SA65 Chip-Scale Atomic Clock for Precision Small Satellite Timing
GlobeNewswire USA Overview Microchip Technology has released the Space CSAC-SA65, a radiation-hardened chip-scale atomic clock designed for demanding space applications. This compact device offers over 30 kRad Total Ionizing Dose (TID) i... -
EPC Space Launches 15V, 25V, and 40V Rad-Hard eGaN FETs with >1 Mrad TID for Next-Gen Space Computing
Semiconductor Today USA Overview EPC Space LLC has announced the release of three new radiation-hardened eGaN power transistors (15V, 25V, 40V) designed for next-generation space computing systems. These devices offer ultra-low on-resist... -
Caltech Breakthrough: Germano-Silicate Waveguides Bring Fiber-Optic Performance to Silicon Chips, Advancing Quantum Technologies
ScienceDaily (Caltech) USA Overview Caltech scientists have developed ultra-low-loss optical pathways on silicon chips using nanoscale germano-silicate waveguides, achieving fiber-optic efficiency in the visible light spectrum. This brea... -
Taiwan’s NYCU and TSMC Achieve 0.42-Nanometer Semiconductor Interface Breakthrough, Revolutionizing Transistor Performance
ScienceDaily Taiwan Overview Researchers from National Yang Ming Chiao Tung University (NYCU), in collaboration with TSMC Corporate Research, have achieved a 0.42-nanometer breakthrough in atomically thin semiconductors by precisely engi...
