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InAs/ZnSe Quantum Dots: 1525 nm SWIR LED Efficiency and PLQY

Nature Communications
Overview
Researchers have developed a heavy-metal-free short-wave infrared (SWIR) LED operating at 1525 nm with a maximum external quantum efficiency (EQE) of 3.5%. By utilizing tailored injection strategies and oxidation-induced interfacial engineering, the team achieved photoluminescence quantum yields (PLQY) exceeding 55% for emission beyond 1400 nm. This advancement addresses critical bottlenecks in lattice mismatch and interfacial quenching for colloidal quantum dot (CQD) emitters.
In Depth

Key Findings

The study reports a high-efficiency, heavy-metal-free SWIR LED operating at 1525 nm. The device achieves a maximum external quantum efficiency (EQE) of 3.5% and a record radiance of ~17 W sr⁻¹ m⁻², with a T50 operational lifetime of 16 h. A critical breakthrough is the achievement of PLQYs exceeding 55% for emission beyond 1400 nm, surpassing previous limits where emission in this range typically yielded PLQY below 20%.

Technical Details

The performance gains are attributed to two primary strategies:

  • Shell Growth Control: The use of optimized high-temperature ZnCl₂ treatment and continuous precursor injection improved shell nucleation and growth.
  • Interfacial Engineering: Controlled interfacial oxidation reduced shell-thickness-dependent strain signatures and improved PLQY retention during the thickening of the shell.

To optimize the device architecture, a semiconducting InAs CQD interlayer was incorporated to suppress interfacial quenching and regulate electron over-injection. Additionally, a doped hole-transport layer was used to reduce series resistance.

Background & Context

SWIR light sources are essential for optical communication, deep-tissue bio-imaging, and machine vision. While conventional epitaxial SWIR LEDs exist, they face high manufacturing costs and strict lattice-matching requirements. Colloidal quantum dots (CQDs) offer a cost-effective, solution-processable alternative. InAs CQDs are promising lead-free candidates, but achieving high PLQY beyond 1400 nm has been hindered by surface defects and interfacial strain. Previous InAs-based CQD LEDs beyond 1.4 μm had reached an EQE of 1.1% at 1410 nm.

Significance & Outlook

By integrating mechanism-driven shell growth with rational device engineering, this approach overcomes current bottlenecks in colloidal emitters. The transition to heavy-metal-free, RoHS-compliant materials like InAs/ZnSe facilitates the scalable integration of SWIR emitters into silicon-based technologies and other short-wave infrared applications.

Source: https://doi.org/10.1038/s41467-026-77896-0

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