Wide Bandgap Semiconductor– tag –
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Infineon and NASA Integrate Component-Level Radiation-Hardened Power Semiconductors into Nancy Grace Roman Space Telescope
Electronics USA USA Overview Infineon Technologies AG and NASA have equipped the Nancy Grace Roman Space Telescope with radiation-hardened power semiconductor components, designed to resist radiation degradation at the component level. T... -
EPC Space Unveils Radiation-Hardened eGaN FETs with Ultra-Low On-Resistance for Next-Gen Space Computing
Aerospace & Defence USA Overview EPC Space has announced new 15V, 25V, and 40V radiation-hardened eGaN FETs in plastic surface-mount packages, targeting next-generation space computing systems incorporating AI and high-performance proces... -
EPC Space Unveils Rad-Hard Linear Regulators Utilizing eGaN HEMTs, Enhancing Spaceflight System Lightweighting and Reliability
EPC Space USA Overview EPC Space has introduced a technology to mitigate ionizing radiation degradation in linear regulators by employing eGaN HEMTs (High Electron Mobility Transistors). Because eGaN HEMTs inherently lack the radiation-v... -
EPC Space Unveils Three Rad-Hard GaN Transistors for Spacecraft Processors, Delivering 101A Continuous Current
IN Electronics & Design UK Overview EPC Space has launched three new low-voltage, radiation-hardened Gallium Nitride (GaN) transistors specifically designed for high-current power conversion around processors and accelerators in spacecra... -
Infineon Launches RIC70115: A 100 krad(Si) Rad-Hard GaN Gate Driver for High-Efficiency Satellite Power Systems
New Products Germany Overview Infineon has released the RIC70115, a radiation-hardened GaN gate driver compatible with both GaN HEMTs and logic-level silicon FETs, designed for satellite power systems. This new product maximizes the bene... -
UK’s Space Forge Partners with Texas A&M University System to Establish Terrestrial Semiconductor Material Manufacturing and Processing Base as First Step into US Market
Space Forge UK, USA Overview UK advanced materials company Space Forge has signed a strategic research agreement with the Texas A&M University System, marking its first step into establishing semiconductor material manufacturing and ... -
EPC Space Launches 15V, 25V, and 40V Rad-Hard eGaN FETs with >1 Mrad TID for Next-Gen Space Computing
Semiconductor Today USA Overview EPC Space LLC has announced the release of three new radiation-hardened eGaN power transistors (15V, 25V, 40V) designed for next-generation space computing systems. These devices offer ultra-low on-resist... -
Microgravity Crystal Growth Boosts Semiconductor Performance; Space Forge Achieves On-Orbit Manufacturing Milestones
BeBeez International Europe Overview Research indicates that crystal growth in microgravity can produce "purer" crystals with more uniform size and structure, potentially leading to significantly enhanced semiconductor performance. Pione... -
China Successfully Completes World’s First On-Orbit Test of 400V Space Power System on Tianzhou-10
Global Times China Overview China successfully completed all on-orbit tests of its new-generation space power system aboard the Tianzhou-10 cargo spacecraft, marking the world's first application of a 400V bus power system in orbit. This... -
South Korea’s KERI Demonstrates SiC-Based Betavoltaic Battery Capable of 50+ Years Operation, a Global First
EurekAlert! South Korea Overview The Korean Electrotechnology Research Institute (KERI) has successfully demonstrated the nation's first SiC-based betavoltaic battery capable of supplying stable power for over 50 years without recharging...
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