Wide Bandgap Semiconductor– tag –
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Planet Labs & Metals Unveils Orbital Manufacturing Platform for Advanced Materials, Titanium Alloys, and Biomedical Products in Microgravity
Planet Labs & Metals USA Overview Planet Labs & Metals has announced an orbital manufacturing platform designed to leverage the microgravity environment, supporting a robust commercial economy in low Earth orbit and beyond. The platf... -
Infineon Unveils Rad-Hard 100 krad(Si) GaN Driver ‘RIC70115’ for Space, Surpassing Si-MOSFET Limitations
Bisinfotech Germany Overview Infineon Technologies announced the RIC70115, a radiation-hardened gallium nitride (GaN) HEMT driver designed for satellite and high-reliability space applications. This new product boasts 100 krad(Si) Total ... -
Novel SiC MOSFET Sustains High Radiation Hardness Across Broad Doses, Paving Way for Deep Space Power Systems
ECS Journal of Solid State Science and Technology (Preprint) International Overview A new Silicon Carbide (SiC) MOSFET, developed for spacecraft power systems, has demonstrated superior radiation hardness across a wide range of radiation... -
GaN Power Amplifiers Demonstrate Superior Radiation Hardness Over Si Devices in Simulated Space Environments
IEEE Transactions on Nuclear Science (Conference Proceedings - July 2026) International Overview Gallium Nitride (GaN)-based power amplifiers, developed for space applications, have exhibited significantly superior radiation hardness com... -
DARPA Selects Seven Projects for ‘Rads to Watts’ Program to Develop Radioisotope Power for Deep-Sea and Space Environments
American Nuclear Society USA Overview DARPA has selected seven innovative projects for its 'Rads to Watts' program, focused on designing radioisotope voltaic cells to provide long-term power in extreme environments like deep-sea and spac... -
Space Forge Focuses on ‘In-Space Growth’ for High-Purity Semiconductors, Aiming for SWaP Improvement and Enhanced Device Reliability via Microgravity
Space Forge UK Overview Space Forge is dedicated to manufacturing high-purity semiconductors using 'in-space growth' technology, leveraging microgravity's ability to eliminate material defects. In microgravity, convection and sedimentati... -
DARPA SPCE Program Advances >85% Efficient, Radiation-Tolerant Space Power Electronics Utilizing GaN/SiC Wide Bandgap Semiconductors
Strategic Market Research USA Overview DARPA's Space Power Conversion Electronics (SPCE) program is addressing the efficiency limitations of traditional space power systems by developing high-efficiency, radiation-tolerant power conversi... -
Vanderbilt Engineers Develop Radiation-Hardened Power Devices for Resilient Space Infrastructure
Vanderbilt University USA Overview Assistant Professor Mona Ebrish at Vanderbilt University, backed by a DARPA grant, is developing radiation-hardened wide-bandgap (WBG) power devices designed to withstand the extreme radiation of space....
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