Novel SiC MOSFET Sustains High Radiation Hardness Across Broad Doses, Paving Way for Deep Space Power Systems

July 19, 2026

ECS Journal of Solid State Science and Technology (Preprint) International

Overview

A new Silicon Carbide (SiC) MOSFET, developed for spacecraft power systems, has demonstrated superior radiation hardness across a wide range of radiation doses, maintaining stable operation compared to conventional silicon-based devices. This SiC MOSFET exhibits minimal electrical property degradation after high-energy particle irradiation, ensuring long-term reliability in harsh space environments. This is a critical advancement, opening the door for more robust and efficient power conversion technologies essential for lunar bases and deep-space probes.

In Depth

Key Findings

A novel Silicon Carbide (SiC) MOSFET, specifically developed for spacecraft power systems, has demonstrated significantly higher radiation hardness and stable operation across a broad range of radiation doses, including over 500 krad of Total Ionizing Dose (TID) and Single-Event Effect (SEE) immunity exceeding LET 60 MeV-cm²/mg, when compared to traditional silicon (Si)-based devices. This breakthrough substantially enhances the feasibility of creating extremely robust and efficient power conversion components essential for long-duration deep-space exploration missions and lunar/Martian base operations.

Technical Details

This new SiC MOSFET utilizes a unique wide bandgap semiconductor structure and an optimized gate oxide process to effectively suppress defect generation and charge trapping induced by radiation. Accelerator-based proton and heavy ion irradiation tests showed that while conventional Si MOSFETs exhibited significant threshold voltage shifts and increases in on-resistance, the novel SiC MOSFET demonstrated negligible changes in drain current characteristics and switching performance after irradiation. Notably, its Total Ionizing Dose (TID) tolerance was approximately doubled compared to previous SiC devices, and the risk of device failure due to Single Event Effects (SEE) was also significantly reduced. Furthermore, its excellent thermal conductivity and high-temperature operating characteristics contribute to simplified thermal management designs and miniaturization of power systems.

Background & Context

Deep-space exploration and long-duration lunar/Martian missions expose electronic components to constant high-energy radiation from solar protons and galactic cosmic rays, unprotected by Earth’s magnetosphere. This radiation can cause severe damage to power converters and power management systems onboard spacecraft, potentially jeopardizing mission success. Traditional silicon devices required extensive shielding or redundant systems to mitigate these challenges, leading to increased mass and cost. SiC MOSFETs, with their superior material properties leading to inherent radiation hardness, have been identified as a critical technology for achieving lighter, more efficient, and highly reliable space power systems.

Strategic Significance & Outlook

The achievements of this new SiC MOSFET are expected to be applied to a wide variety of spacecraft and infrastructure power conversion systems, including lunar rovers, landers, power supply units for lunar bases, and interplanetary deep-space probes. Its high reliability and efficiency in radiation environments are key to enabling ambitious future missions such as human deep-space exploration and space resource utilization. Moving forward, large-scale space qualification tests and the process for achieving space-grade product certification are expected to accelerate, with deployment in operational missions anticipated in the 2030s.

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