Key Findings
Samsung Electronics has agreed to use TSMC’s 3-nanometre process for the production of base dies for Nvidia’s next-generation custom high-bandwidth memory (HBM) chips. According to a report by the Seoul Economic Daily, this represents the first instance of Samsung working with the Taiwanese contract chipmaker during the HBM manufacturing stage.
Technical Details
Nvidia has specified a set of requirements for its NVHBM (Nvidia HBM) architecture, which was unveiled in August. The technical specifications requested from Samsung, SK Hynix, and Micron Technology include:
- Base Dies: Production via TSMC’s 3-nanometre process.
- Core Dies: Implementation of sixth-generation DRAM technology.
The NVHBM design integrates Nvidia’s custom memory controller directly into the base die. This architectural shift is intended to standardize implementation across multiple memory suppliers.
Background & Context
Samsung accepted these requirements following an internal review. However, the company intends to maintain its in-house production model for standard HBM products and custom orders for other clients. The move to TSMC is specific to the NVHBM requirements set by Nvidia.
Significance & Outlook
The collaboration highlights Nvidia’s push for standardization across its memory supply chain by mandating specific foundry processes for the base die. While Samsung is currently adopting the TSMC process for these components, the company is also evaluating the feasibility of using its own foundry to produce NVHBM base dies should demand eventually exceed TSMC’s available capacity.
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