Key Findings
Researchers have successfully fabricated high-quality perovskite semiconductor thin films that enable both high-performance solar cells and light-emitting diodes (LEDs) using a single material and identical device structures. The developed thin films exhibit a charge lifetime of approximately 295 microseconds (μs) and a surface recombination velocity of 0.3 cm/s, figures that represent some of the highest quality levels reported for perovskite materials and are comparable to top-tier silicon semiconductors.
Technical Details
The team utilized the “eutectic” phenomenon, where the melting point of a mixture is significantly lower than that of its individual components. By mixing MACl and zinc halide (ZnX₂)—both of which have high individual melting points—the team created a mixture that forms a liquid state at a much lower temperature to control crystal growth.
- Process: The thin film was heat-treated at approximately 100℃, converting mixtures at the grain boundaries into a thin liquid layer. This accelerated the bonding of small crystals into larger, uniform crystals with fewer defects.
- Composition: During heat treatment, the MACl volatilized and was removed, while the remaining zinc (Zn) gathered at the grain boundaries to suppress defects.
- Solar Cell Performance: The n-i-p structure solar cell achieved a power conversion efficiency of 26.5% and a record-breaking open-circuit voltage of 1.208V for that specific structure.
- LED Performance: The same structure yielded an external quantum efficiency of 26.1%.
Background & Context
Perovskites are valued for low manufacturing costs and simple processing. However, the transition from liquid solution to thin film typically creates grain boundaries and surface defects. These defects cause charge loss during transport, which reduces the overall efficiency and lifespan of the resulting devices.
Significance & Outlook
This research, conducted through international collaboration with the Korea Research Institute of Chemical Technology, UC San Diego, and Princeton University, demonstrates that eutectic phenomena can be used to precisely control crystal growth and defects in semiconductor thin films. The results, published in Science, provide a new material processing technology for next-generation optoelectronic devices.
Source: https://www.lecturernews.com/news/articleView.html?idxno=212158
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