Key Findings
Hunan Titan Future Technology has developed the first 12-inch polycrystalline silicon carbide (SiC) substrate in China. The product is currently in the stage of sample validation and small-batch trial production, having already completed validation by leading companies.
Technical Details
The substrate is engineered specifically for thermal management rather than epitaxial growth for power devices. Key technical specifications and applications include:
- Thermal Performance: Thermal conductivity exceeds 280 W/(m·K).
- Primary Function: Acts as a heat-conducting base within semiconductor packaging structures to alleviate heat buildup during high-power chip operation.
- Target Applications: AI computing chips and advanced packaging.
- Alternative Uses: The substrate can serve as a carrier for crystal growth and a base for high-temperature semiconductor processing.
Background and Context
The technology is based on research from the Powder Metallurgy Research Institute at Central South University, with a core team comprising several doctoral graduates from the institution. Titan Future previously developed domestic 6-inch and 8-inch polycrystalline SiC substrates.
The company is expanding its manufacturing footprint across three locations:
- Changsha: Serves as the technology development and application incubation center.
- Xiamen: Planned annual capacity of 500,000 composite SiC substrates.
- Jinhu, Jiangsu: A new integrated manufacturing base for high-purity, high-density SiC components and polycrystalline substrates broke ground on September 28.
Significance and Outlook
The Jinhu facility will produce high-performance SiC components and tantalum carbide (TaC)-coated products. Once fully operational, this site is expected to reach an annual production capacity of 200,000 units, generating CNY 600 million in annual sales and contributing CNY 30 million in tax revenue.
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