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IMEC, TSMC, Intel, and Samsung Pursue Atomically-Thin 2D Transistors to Sustain Moore’s Law Beyond Silicon in 2026

Internet Pros USA
Overview
As silicon transistors approach scaling limits, industry leaders IMEC, TSMC, Intel, and Samsung are shifting to atomically-thin 2D semiconductors for next-generation chips. Materials like molybdenum disulfide (MoS2) offer superior control over current flow even at a few atoms thick, preventing leaks and improving power efficiency. This fundamental material transition is crucial for continuing Moore’s Law and advancing computing capabilities, signaling a major paradigm shift in semiconductor technology.
In Depth

Key Findings

With silicon transistors rapidly approaching their physical scaling limits, leading semiconductor players such as IMEC, TSMC, Intel, and Samsung are strategically investing in the development of next-generation transistors based on atomically-thin two-dimensional (2D) semiconductor materials. This concerted effort is critical to sustaining Moore’s Law and represents a fundamental inflection point in semiconductor material science.

Technical / Clinical Details

Traditional silicon transistors have relied on advanced 3D structures like FinFETs to achieve miniaturization. However, as gate lengths shrink to just a few nanometers, challenges such as short-channel effects and increased leakage currents become prominent. In contrast, 2D materials like graphene, molybdenum disulfide (MoS2), and tungsten disulfide (WS2), due to their intrinsically atomically thin nature, enable superior electrostatic gate control even at just a few atomic layers thick. This dramatically reduces current leakage in both ‘on’ and ‘off’ states of the transistor, leading to significant improvements in power efficiency. Specifically, MoS2 is reported to operate with approximately one-tenth the power consumption of silicon while achieving high switching speeds. Research institutions like IMEC are actively tackling the technical hurdles associated with integrating these 2D materials into existing CMOS manufacturing processes, focusing on high-quality thin-film growth, defect-free stacking, and optimized electrical contacts.

Background & Context

Moore’s Law has been the primary driver of semiconductor industry growth for decades, but its continued validity is now challenged by physical limitations and escalating manufacturing costs. 2D semiconductors have emerged as a promising candidate to overcome these hurdles and usher in the post-Moore era. The significant investments by incumbent semiconductor companies in this technology underscore its immense potential impact. The transition to 2D materials is not merely a material swap but will lead to substantial transformations in transistor design architectures and overall manufacturing processes. This shift is expected to enhance the performance of all electronic devices, from smartphones to data centers, creating fertile ground for new technological innovations.

Strategic Significance & Outlook

While 2D semiconductor transistors are still in their early stages of practical application, aggressive development investments from major corporations and breakthroughs from research institutions are accelerating their rapid advancement. In the coming years, more high-performance and energy-efficient chips are expected to enter the market, accelerating the development of cutting-edge technologies like AI, IoT, and quantum computing. Key challenges ahead include ensuring the quality and uniformity of 2D materials during large-scale production and establishing cost-effective manufacturing processes. If successful, this technology will usher the semiconductor industry into a new growth phase, unlocking the next frontier of computing capabilities and reshaping the digital world.

Source: https://internet-pros.com/blog/2d-semiconductors-beyond-silicon-transistors-2026/

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